IRLR3110ZTRPBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRLR3110ZTRPBF

Manufacturer Part Number:

IRLR3110ZTRPBF

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

0.79

Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas):

110 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (Abs) (ID):

63 A

Drain Current-Max (ID):

42 A

Drain-source On Resistance-Max:

0.014 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

140 W

Pulsed Drain Current-Max (IDM):

250 A

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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Alternate Parts

IRLR3110ZPBF