K4B2G0846C-HCH9 Samsung Semiconductor | Chip 1 Exchange

K4B2G0846C-HCH9

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K4B2G0846C-HCH9

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Package Description:

FBGA, BGA78,9X13,32

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.36

Manufacturer:

Samsung Semiconductor

Risk Rank:

8.02

Clock Frequency-Max (fCLK):

667 MHz

I/O Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B78

JESD-609 Code:

e1

Memory Density:

2147483648 bit

Memory IC Type:

DDR DRAM

Memory Width:

8

Number of Terminals:

78

Number of Words:

268435456 words

Number of Words Code:

256000000

Operating Temperature-Max:

85 °C

Organization:

256MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

FBGA

Package Equivalence Code:

BGA78,9X13,32

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, FINE PITCH

Power Supplies:

1.5 V

Qualification Status:

Not Qualified

Refresh Cycles:

8192

Sequential Burst Length:

8

Standby Current-Max:

0.012 A

Subcategory:

DRAMs

Supply Current-Max:

0.21 mA

Supply Voltage-Nom (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

OTHER

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

0.8 mm

Terminal Position:

BOTTOM

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