K6X1008C2DGF70

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K6X1008C2D-GF70

Rohs Code:

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

SAMSUNG SEMICONDUCTOR INC

Part Package Code:

SOIC

Package Description:

0.525 INCH, PLASTIC, SOP-32

Pin Count:

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8542.32.00.41

Manufacturer:

Samsung Semiconductor

Risk Rank:

9.17

Access Time-Max:

70 ns

I/O Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

Length:

20.47 mm

Memory Density:

1048576 bit

Memory IC Type:

STANDARD SRAM

Memory Width:

Moisture Sensitivity Level:

Number of Functions:

Number of Terminals:

Number of Words:

131072 words

Number of Words Code:

128000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP32,.56

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Parallel/Serial:

PARALLEL

Peak Reflow Temperature (Cel):

240

Power Supplies:

5 V

Qualification Status:

Not Qualified

Seated Height-Max:

3 mm

Standby Current-Max:

0.00001 A

Standby Voltage-Min:

2 V

Subcategory:

SRAMs

Supply Current-Max:

0.025 mA

Supply Voltage-Max (Vsup):

5.5 V

Supply Voltage-Min (Vsup):

4.5 V

Supply Voltage-Nom (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

Width:

11.43 mm

Cart