K6X4008C1FDB70

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K6X4008C1F-DB70

Rohs Code:

No

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

SAMSUNG SEMICONDUCTOR INC

Package Description:

DIP, DIP32,.6

Reach Compliance Code:

compliant

ECCN Code:

3A991.B.2.A

HTS Code:

8542.32.00.41

Manufacturer:

Samsung Semiconductor

Risk Rank:

9.79

Access Time-Max:

70 ns

I/O Type:

COMMON

JESD-30 Code:

R-PDIP-T32

Memory Density:

4194304 bit

Memory IC Type:

STANDARD SRAM

Memory Width:

8

Number of Terminals:

32

Number of Words:

524288 words

Number of Words Code:

512000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

70 °C

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

RECTANGULAR

Package Style:

IN-LINE

Parallel/Serial:

PARALLEL

Power Supplies:

5 V

Qualification Status:

Not Qualified

Standby Current-Max:

0.000012 A

Standby Voltage-Min:

2 V

Subcategory:

SRAMs

Supply Current-Max:

0.03 mA

Supply Voltage-Nom (Vsup):

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

COMMERCIAL

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Alternate Parts

BS62LV4007PC70

BS62LV4007PI70