K6X4008C1FVB70

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K6X4008C1F-VB700

Rohs Code:

Part Life Cycle Code:

Obsolete

Part Package Code:

TSOP2

Package Description:

TSOP2, TSOP32,.46

Pin Count:

Reach Compliance Code:

compliant

ECCN Code:

3A991.B.2.A

HTS Code:

8542.32.00.41

Manufacturer:

Samsung Semiconductor

Risk Rank:

9.79

Access Time-Max:

70 ns

I/O Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

20.95 mm

Memory Density:

4194304 bit

Memory IC Type:

STANDARD SRAM

Memory Width:

Moisture Sensitivity Level:

Number of Functions:

Number of Terminals:

Number of Words:

524288 words

Number of Words Code:

512000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

70 °C

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

TSOP2

Package Equivalence Code:

TSOP32,.46

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, THIN PROFILE

Parallel/Serial:

PARALLEL

Power Supplies:

5 V

Qualification Status:

Not Qualified

Seated Height-Max:

1.2 mm

Standby Current-Max:

0.000012 A

Standby Voltage-Min:

2 V

Subcategory:

SRAMs

Supply Current-Max:

0.03 mA

Supply Voltage-Max (Vsup):

5.5 V

Supply Voltage-Min (Vsup):

4.5 V

Supply Voltage-Nom (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

COMMERCIAL

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.16 mm

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