K9WAG08U1E-SIB0 Samsung Semiconductor | Chip 1 Exchange

K9WAG08U1E-SIB0

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K9WAG08U1E-SIB0

Part Life Cycle Code:

Active

Ihs Manufacturer:

SAMSUNG SEMICONDUCTOR INC

Package Description:

TSOP1-48

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

Samsung Semiconductor

Risk Rank:

5.83

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

FLASH

Memory Width:

8

Number of Functions:

1

Number of Terminals:

48

Number of Words:

2147483648 words

Number of Words Code:

2000000000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

TSOP1

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, THIN PROFILE

Parallel/Serial:

PARALLEL

Programming Voltage:

2.7 V

Seated Height-Max:

1.2 mm

Supply Voltage-Max (Vsup):

3.6 V

Supply Voltage-Min (Vsup):

2.7 V

Supply Voltage-Nom (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Form:

GULL WING

Terminal Pitch:

0.5 mm

Terminal Position:

DUAL

Type:

SLC NAND TYPE

Width:

12 mm

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