MT47H64M16HR25E

Manufacturer: Micron Technology Inc

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

MT47H64M16HR-25ELAIT:H

Part Life Cycle Code:

Active

Package Description:

TFBGA,

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.32

Manufacturer:

Micron Technology Inc

Risk Rank:

7.18

Access Mode:

MULTI BANK PAGE BURST

Access Time-Max:

0.4 ns

Additional Feature:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

DDR2 DRAM

Memory Width:

Number of Functions:

Number of Ports:

Number of Terminals:

Number of Words:

67108864 words

Number of Words Code:

64000000

Operating Mode:

SYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

TFBGA

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (Cel):

260

Screening Level:

AEC-Q100

Seated Height-Max:

1.2 mm

Self Refresh:

YES

Supply Voltage-Max (Vsup):

1.9 V

Supply Voltage-Min (Vsup):

1.7 V

Supply Voltage-Nom (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

0.8 mm

Terminal Position:

BOTTOM

Time@Peak Reflow Temperature-Max (s):

Width:

8 mm

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