MT47H64M16NF25EM

Manufacturer: Micron Technology Inc

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

MT47H64M16NF-25E:M

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Part Package Code:

BGA

Package Description:

TFBGA, BGA84,9X15,32

Pin Count:

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.32

Manufacturer:

Micron Technology Inc

Risk Rank:

0.93

Access Mode:

MULTI BANK PAGE BURST

Access Time-Max:

0.4 ns

Additional Feature:

SELF REFRESH

Clock Frequency-Max (fCLK):

400 MHz

I/O Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

DDR2 DRAM

Memory Width:

Number of Functions:

Number of Ports:

Number of Terminals:

Number of Words:

67108864 words

Number of Words Code:

64000000

Operating Mode:

SYNCHRONOUS

Operating Temperature-Max:

85 °C

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

TFBGA

Package Equivalence Code:

BGA84,9X15,32

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (Cel):

260

Power Supplies:

1.8 V

Qualification Status:

Not Qualified

Refresh Cycles:

8192

Seated Height-Max:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Subcategory:

DRAMs

Supply Voltage-Max (Vsup):

1.9 V

Supply Voltage-Min (Vsup):

1.7 V

Supply Voltage-Nom (Vsup):