NAND02GR3B2BZA6

Manufacturer: STMicroelectronics

Product Category: Memory

Description:

Product Technical Specifications

Source Content uid:

NAND02GR3B2BZA6E

Manufacturer Part Number:

NAND02GR3B2BZA6E

Part Life Cycle Code:

Transferred

Part Package Code:

BGA

Package Description:

TFBGA,

Pin Count:

63

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

STMicroelectronics

Risk Rank:

7.63

Access Time-Max:

25000 ns

JESD-30 Code:

R-PBGA-B63

Length:

12 mm

Memory Density:

2147483648 bit

Memory IC Type:

FLASH

Memory Width:

8

Number of Functions:

1

Number of Terminals:

63

Number of Words:

268435456 words

Number of Words Code:

256000000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

TFBGA

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel/Serial:

PARALLEL

Programming Voltage:

1.8 V

Qualification Status:

Not Qualified

Seated Height-Max:

1.05 mm

Supply Voltage-Max (Vsup):

1.95 V

Supply Voltage-Min (Vsup):

1.7 V

Supply Voltage-Nom (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Form:

BALL

Terminal Pitch:

0.8 mm

Terminal Position:

BOTTOM

Width:

9.5 mm

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