NAND04GW3B2CN6E

Manufacturer: Micron Technology Inc

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

NAND04GW3B2CN6E

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

MICRON TECHNOLOGY INC

Part Package Code:

TSOP

Package Description:

TSSOP,

Pin Count:

48

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

Micron Technology Inc

Risk Rank:

9.11

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

4294967296 bit

Memory IC Type:

FLASH

Memory Width:

8

Number of Functions:

1

Number of Terminals:

48

Number of Words:

536870912 words

Number of Words Code:

512000000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

TSSOP

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel/Serial:

PARALLEL

Programming Voltage:

3 V

Seated Height-Max:

1.2 mm

Supply Voltage-Max (Vsup):

3.6 V

Supply Voltage-Min (Vsup):

2.7 V

Supply Voltage-Nom (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

0.5 mm

Terminal Position:

DUAL

Width:

12 mm

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