NAND512W3A2SZAXE

Manufacturer: Micron Technology Inc

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

NAND512W3A2SZAXE

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Package Description:

VFBGA-63

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

Micron Technology Inc

Risk Rank:

9.43

Access Time-Max:

35 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

512753664 bit

Memory IC Type:

FLASH

Memory Width:

8

Number of Functions:

1

Number of Sectors/Size:

4K

Number of Terminals:

63

Number of Words:

64094208 words

Number of Words Code:

64000000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

TFBGA

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH

Page Size:

512 words

Parallel/Serial:

PARALLEL

Power Supplies:

3/3.3 V

Programming Voltage:

3 V

Qualification Status:

Not Qualified

Ready/Busy:

YES

Seated Height-Max:

1.05 mm

Sector Size:

16K

Standby Current-Max:

0.00005 A

Subcategory:

Flash Memories

Supply Current-Max:

0.02 mA

Supply Voltage-Max (Vsup):

3.6 V

Supply Voltage-Min (Vsup):

2.7 V

Supply Voltage-Nom (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Form:

BALL

Terminal Pitch:

0.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Alternate Parts

NAND512W3A2SZA6F