NTD5865NLT4G

Manufacturer: ON Semiconductor

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

NTD5865NLT4G

Manufacturer Part Number:

NTD5865NLT4G

Brand Name:

ON Semiconductor

Pbfree Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

ON SEMICONDUCTOR

Package Description:

DPAK-3

Pin Count:

4

Manufacturer Package Code:

369AA

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Factory Lead Time:

18 Weeks

Manufacturer:

ON Semiconductor

Risk Rank:

1.61

Samacsys Description:

N-Channel Power MOSFET 60 V, 46 A, 16 m ohm

Samacsys Manufacturer:

ON Semiconductor

Avalanche Energy Rating (Eas):

36 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

40 A

Drain Current-Max (ID):

40 A

Drain-source On Resistance-Max:

0.019 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

52 W

Pulsed Drain Current-Max (IDM):

137 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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