NTMFS5113PLT1G

No Match Found

Product Technical Specifications

Source Content uid

NTMFS5113PLT1G

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PDSO-F5

Manufacturer Package Code

488AA

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

74 Weeks

Avalanche Energy Rating (Eas)

315 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (Abs) (ID)

64 A

Drain Current-Max (ID)

10 A

Drain-source On Resistance-Max

0.014 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-F5

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

5

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max (Abs)

150 W

Pulsed Drain Current-Max (IDM)

415 A

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Element Material

SILICON