NVD5867NLT4G

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Product Technical Specifications

Source Content uid

NVD5867NLT4G

Pbfree Code

Yes

Part Life Cycle Code

Lifetime Buy

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3

Pin Count

4

Manufacturer Package Code

369AA

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

18 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (Abs) (ID)

22 A

Drain Current-Max (ID)

6 A

Drain-source On Resistance-Max

0.05 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

43 W

Pulsed Drain Current-Max (IDM)

85 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Element Material

SILICON