NVMFS5113PLT1G

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Product Technical Specifications

Source Content uid

NVMFS5113PLT1G

Pbfree Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, R-PDSO-F5

Manufacturer Package Code

488AA

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

77 Weeks

Avalanche Energy Rating (Eas)

315 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain-source On Resistance-Max

0.014 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-F5

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

5

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

415 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Element Material

SILICON

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Alternate Parts

NTMFS5113PLT1G

370122

NVMFS5113PLTWFT1G

NVMFS5113PLWFT1G