NVMFS5C604NLAFT1G

Manufacturer: onsemi

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

NVMFS5C604NLAFT1G

Manufacturer Part Number:

NVMFS5C604NLAFT1G

Brand Name:

ON Semiconductor

Pbfree Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

ON SEMICONDUCTOR

Package Description:

SMALL OUTLINE, R-PDSO-F5

Manufacturer Package Code:

506EZ

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Date Of Intro:

2017-02-24

Manufacturer:

onsemi

Risk Rank:

1.22

Avalanche Energy Rating (Eas):

776 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

287 A

Drain Current-Max (ID):

287 A

Drain-source On Resistance-Max:

0.0017 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss):

40 pF

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

200 W

Pulsed Drain Current-Max (IDM):

900 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Element Material:

SILICON

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Alternate Parts

NVMFS5C604NLWFAFT1G