NVMFS5C612NT1G

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Product Technical Specifications

Source Content uid

NVMFS5C612NT1G

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SO-8FL, DFN5, 6 PIN

Manufacturer Package Code

488AA

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

451 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (Abs) (ID)

225 A

Drain Current-Max (ID)

225 A

Drain-source On Resistance-Max

0.00165 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

30 pF

JESD-30 Code

R-PDSO-F5

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

5

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

167 W

Pulsed Drain Current-Max (IDM)

900 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Element Material

SILICON