PHK12NQ10T

Manufacturer: Nexperia

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

PHK12NQ10T

Manufacturer Part Number:

PHK12NQ10T

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

NEXPERIA

Package Description:

SMALL OUTLINE, R-PDSO-G8

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Date Of Intro:

2017-02-01

Manufacturer:

Nexperia

Risk Rank:

9.1

Avalanche Energy Rating (Eas):

65 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (ID):

11.6 A

Drain-source On Resistance-Max:

0.028 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level:

2

Number of Elements:

1

Number of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

48 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON