PHT6N06LT

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Product Technical Specifications

Source Content uid

PHT6N06LT

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NEXPERIA

Package Description

SMALL OUTLINE, R-PDSO-G4

Reach Compliance Code

compliant

ECCN Code

EAR99

Date Of Intro

2017-02-01

Avalanche Energy Rating (Eas)

15 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

55 V

Drain Current-Max (ID)

2.5 A

Drain-source On Resistance-Max

0.15 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-G4

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

10 A

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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