PMGD780SN115

Manufacturer: NXP Semiconductors

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

PMGD780SN,115

Manufacturer Part Number:

PMGD780SN,115

Brand Name:

NXP Semiconductor

Rohs Code:

Yes

Part Life Cycle Code:

Transferred

Ihs Manufacturer:

NXP SEMICONDUCTORS

Part Package Code:

TSSOP

Package Description:

SMALL OUTLINE, R-PDSO-G6

Pin Count:

Manufacturer Package Code:

SOT363

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8541.29.00.75

Manufacturer:

NXP Semiconductors

Risk Rank:

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

0.49 A

Drain Current-Max (ID):

0.49 A

Drain-source On Resistance-Max:

0.92 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

0.41 W

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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