PSMN015100B

Manufacturer: Nexperia

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

PSMN015-100B

Manufacturer Part Number:

PSMN015-100B

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

NEXPERIA

Package Description:

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Date Of Intro:

1999-04-16

Manufacturer:

Nexperia

Risk Rank:

6.85

Additional Feature:

AVALANCHE RATED

Avalanche Energy Rating (Eas):

320 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (ID):

75 A

Drain-source On Resistance-Max:

0.015 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

245

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

240 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart