PSMN1R030YLDX

Manufacturer: Nexperia

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

PSMN1R0-30YLDX

Manufacturer Part Number:

PSMN1R0-30YLDX

Brand Name:

Nexperia

Part Life Cycle Code:

Active

Ihs Manufacturer:

NEXPERIA

Part Package Code:

SOIC

Package Description:

SMALL OUTLINE, R-PSSO-G4

Pin Count:

Manufacturer Package Code:

SOT669

Reach Compliance Code:

compliant

Manufacturer:

Nexperia

Risk Rank:

1.13

Additional Feature:

HIGH RELIABILITY

Avalanche Energy Rating (Eas):

1588 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

30 V

Drain Current-Max (ID):

100 A

Drain-source On Resistance-Max:

0.0013 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

1441 A

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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