PSMN1R030YLD

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Product Technical Specifications

Source Content uid

PSMN1R0-30YLD

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Package Description

SMALL OUTLINE, R-PSSO-G4

Reach Compliance Code

unknown

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Avalanche Energy Rating (Eas)

1588 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

30 V

Drain Current-Max (ID)

100 A

Drain-source On Resistance-Max

0.0013 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

MO-235

JESD-30 Code

R-PSSO-G4

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

1441 A

Reference Standard

IEC-60134

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

PSMN1R030YLD