SI2319CDST1BE3

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Product Technical Specifications

Part Life Cycle Code

Not Recommended

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Description

,

Reach Compliance Code

unknown

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

40 V

Drain Current-Max (ID)

4.4 A

Drain-source On Resistance-Max

0.077 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

61 pF

JEDEC-95 Code

TO-236AB

JESD-30 Code

R-PDSO-G3

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max (Abs)

2.5 W

Pulsed Drain Current-Max (IDM)

20 A

Reference Standard

IEC-61249-2-21

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

DUAL

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

46 ns

Turn-on Time-Max (ton)

34 ns

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Alternate Parts

SI2319CDST1GE3