SI3127DVT1GE3

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Product Technical Specifications

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

Reach Compliance Code

compliant

ECCN Code

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (ID)

5.1 A

Drain-source On Resistance-Max

0.089 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

MO-193AA

JESD-30 Code

R-PDSO-G6

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

6

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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Alternate Parts

FDC5614P