SI3129DV

Manufacturer: Vishay Intertechnologies

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

SI3129DV-T1-GE3

Rohs Code:

Yes

Part Life Cycle Code:

Active

Reach Compliance Code:

unknown

ECCN Code:

EAR99

Date Of Intro:

2020-10-25

Manufacturer:

Vishay Intertechnologies

Risk Rank:

7.77

Avalanche Energy Rating (Eas):

11 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

80 V

Drain Current-Max (ID):

5.4 A

Drain-source On Resistance-Max:

0.0827 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss):

10 pF

JEDEC-95 Code:

MO-193AA

JESD-30 Code:

R-PDSO-G6

Number of Elements:

1

Number of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

P-CHANNEL

Power Dissipation-Max (Abs):

4.2 W

Pulsed Drain Current-Max (IDM):

20 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Turn-off Time-Max (toff):

74 ns

Turn-on Time-Max (ton):

46 ns

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