SIS862DNT1GE3

Manufacturer: Vishay Intertechnologies

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

SIS862DN-T1-GE3

Rohs Code:

Yes

Part Life Cycle Code:

Active

Package Description:

SMALL OUTLINE, S-PDSO-F5

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Vishay Intertechnologies

Risk Rank:

7.73

Avalanche Energy Rating (Eas):

11.25 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (ID):

40 A

Drain-source On Resistance-Max:

0.0085 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-F5

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

100 A

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON