SISS71DNT1GE3

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Product Technical Specifications

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, S-PDSO-N5

Reach Compliance Code

unknown

ECCN Code

EAR99

Date Of Intro

2016-09-25

Avalanche Energy Rating (Eas)

31 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

23 A

Drain-source On Resistance-Max

0.082 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

S-PDSO-N5

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

5

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-50 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

SQUARE

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

40 A

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

NO LEAD

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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Alternate Parts

SI7113DNT1GE3

FDMC86139P

SISS73DNT1GE3