SM8S36AHE32D Vishay Semiconductors | Chip 1 Exchange

SM8S36AHE32D

Manufacturer: Vishay Semiconductors

Product Category: Diodes

Description:

Product Technical Specifications

Manufacturer Part Number:

SM8S36AHE3/2D

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

VISHAY SEMICONDUCTORS

Part Package Code:

DO-218

Package Description:

R-PSSO-C1

Pin Count:

1

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8541.10.00.50

Manufacturer:

Vishay Semiconductors

Risk Rank:

7.9

Additional Feature:

HIGH RELIABILITY, PD-CASE

Breakdown Voltage-Max:

44.2 V

Breakdown Voltage-Min:

40 V

Breakdown Voltage-Nom:

42.1 V

Case Connection:

ANODE

Clamping Voltage-Max:

58.1 V

Configuration:

SINGLE

Diode Element Material:

SILICON

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE

JEDEC-95 Code:

DO-218AB

JESD-30 Code:

R-PSSO-C1

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Non-rep Peak Rev Power Dis-Max:

5200 W

Number of Elements:

1

Number of Terminals:

1

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

245

Polarity:

UNIDIRECTIONAL

Power Dissipation-Max:

8 W

Qualification Status:

Not Qualified

Reference Standard:

AEC-Q101

Rep Pk Reverse Voltage-Max:

36 V

Subcategory:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

30

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