SPB11N60C3 Infineon Technologies AG | Chip 1 Exchange

SPB11N60C3

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

SPB11N60C3

Manufacturer Part Number:

SPB11N60C3

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Not Recommended

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Part Package Code:

D2PAK

Package Description:

GREEN, PLASTIC, TO-263, 3 PIN

Pin Count:

4

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.45

Additional Feature:

AVALANCHE RATED

Avalanche Energy Rating (Eas):

340 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

600 V

Drain Current-Max (Abs) (ID):

11 A

Drain Current-Max (ID):

11 A

Drain-source On Resistance-Max:

0.38 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

125 W

Pulsed Drain Current-Max (IDM):

33 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

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