SQJ469EPT1GE3

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Product Technical Specifications

Rohs Code

Yes

Part Life Cycle Code

Not Recommended

Package Description

SMALL OUTLINE, R-PSSO-G4

Reach Compliance Code

compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

101 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

80 V

Drain Current-Max (ID)

32 A

Drain-source On Resistance-Max

0.025 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PSSO-G4

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

128 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Element Material

SILICON

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Alternate Parts

SQJ479EP