SQJ850EP-T1_GE3 Vishay Intertechnologies | Chip 1 Exchange

SQJ850EP-T1_GE3

Manufacturer: Vishay Intertechnologies

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

SQJ850EP-T1_GE3

Rohs Code:

Yes

Part Life Cycle Code:

Not Recommended

Ihs Manufacturer:

VISHAY INTERTECHNOLOGY INC

Package Description:

SMALL OUTLINE, R-PSSO-G4

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Factory Lead Time:

20 Weeks, 1 Day

Manufacturer:

Vishay Intertechnologies

Risk Rank:

8.01

Avalanche Energy Rating (Eas):

11 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (ID):

24 A

Drain-source On Resistance-Max:

0.023 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G4

Number of Elements:

1

Number of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

96 A

Qualification Status:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

40

Transistor Element Material:

SILICON

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