STD10P6F6

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Product Technical Specifications

Source Content uid

STD10P6F6

Part Life Cycle Code

Active

Package Description

DPAK-3/2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

53 Weeks, 1 Day

Avalanche Energy Rating (Eas)

80 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (Abs) (ID)

10 A

Drain Current-Max (ID)

10 A

Drain-source On Resistance-Max

0.116 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max (Abs)

35 W

Pulsed Drain Current-Max (IDM)

40 A

Surface Mount

NO

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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Alternate Parts

STD15P6F6AG

STMSTD10P6F6