STL225N6F7AG

Manufacturer: STMicroelectronics

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

STL225N6F7AG

Manufacturer Part Number:

STL225N6F7AG

Brand Name:

STMicroelectronics

Part Life Cycle Code:

Active

Ihs Manufacturer:

STMICROELECTRONICS

Reach Compliance Code:

not_compliant

Factory Lead Time:

16 Weeks

Manufacturer:

STMicroelectronics

Risk Rank:

5.81

Samacsys Description:

MOSFET Automotive 60V N-Ch 12mOhm 120A F7 Power

Samacsys Manufacturer:

STMicroelectronics

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (ID):

120 A

Drain-source On Resistance-Max:

0.0014 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

188 W

Pulsed Drain Current-Max (IDM):

480 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart

STL225N6F7AG

Product Technical Specifications

Source Content uid:

Manufacturer Part Number:

Brand Name:

Part Life Cycle Code:

Ihs Manufacturer:

Reach Compliance Code:

Factory Lead Time:

Manufacturer:

Risk Rank:

Samacsys Description:

Samacsys Manufacturer:

Case Connection:

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JESD-30 Code:

Number of Elements:

Number of Terminals:

Operating Mode:

Operating Temperature-Max:

Operating Temperature-Min:

Package Body Material:

Package Shape:

Package Style:

Peak Reflow Temperature (Cel):

Polarity/Channel Type:

Power Dissipation-Max (Abs):

Pulsed Drain Current-Max (IDM):

Reference Standard:

Surface Mount:

Terminal Form:

Terminal Position:

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

Transistor Element Material:

Alternate Parts

NO

NVMFS5C612NT1G

Datasheets

Datasheets Files List

Datasheets PDF View

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