STP80NE06-10 STMicroelectronics | Chip 1 Exchange

STP80NE06-10

Manufacturer: STMicroelectronics

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

STP80NE06-10

Manufacturer Part Number:

STP80NE06-10

Rohs Code:

No

Part Life Cycle Code:

Obsolete

Part Package Code:

TO-220AB

Package Description:

FLANGE MOUNT, R-PSFM-T3

Pin Count:

3

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

STMicroelectronics

Risk Rank:

8.79

Avalanche Energy Rating (Eas):

250 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

80 A

Drain Current-Max (ID):

80 A

Drain-source On Resistance-Max:

0.01 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

FLANGE MOUNT

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

150 W

Pulsed Drain Current-Max (IDM):

320 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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