TSM650N15CSRLG

No Match Found

Product Technical Specifications

Rohs Code

Yes

Part Life Cycle Code

Not Recommended

Package Description

SMALL OUTLINE, R-PDSO-G8

Reach Compliance Code

compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

60 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

150 V

Drain Current-Max (ID)

4 A

Drain-source On Resistance-Max

0.08 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-G8

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

36 A

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON