VNB35N07E

Manufacturer: STMicroelectronics

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

VNB35N07-E

Manufacturer Part Number:

VNB35N07-E

Brand Name:

STMicroelectronics

Part Life Cycle Code:

Obsolete

Package Description:

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

STMicroelectronics

Risk Rank:

7.61

Configuration:

COMPLEX

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

35 A

Drain-source On Resistance-Max:

0.035 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

125 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Turn-off Time-Max (toff):

1350 ns

Turn-on Time-Max (ton):

800 ns