BSZ123N08NS3G

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Product Technical Specifications

Source Content uid

BSZ123N08NS3G

Pbfree Code

Yes

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

SMALL OUTLINE, S-PDSO-N5

Pin Count

8

Reach Compliance Code

compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

110 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

80 V

Drain Current-Max (Abs) (ID)

40 A

Drain Current-Max (ID)

10 A

Drain-source On Resistance-Max

0.0123 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

S-PDSO-N8

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

SQUARE

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

66 W

Pulsed Drain Current-Max (IDM)

160 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

NO LEAD

Terminal Position

DUAL

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

BSZ123N08NS3G