IPP410N30N

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IPP410N30N

Manufacturer Part Number:

IPP410N30N

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

FLANGE MOUNT, R-PSFM-T3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.71

Avalanche Energy Rating (Eas):

240 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

300 V

Drain Current-Max (ID):

44 A

Drain-source On Resistance-Max:

0.041 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

FLANGE MOUNT

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

176 A

Surface Mount:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

IPP410N30N

Product Technical Specifications

Source Content uid:

Manufacturer Part Number:

Rohs Code:

Part Life Cycle Code:

Ihs Manufacturer:

Package Description:

Reach Compliance Code:

ECCN Code:

Manufacturer:

Risk Rank:

Avalanche Energy Rating (Eas):

Case Connection:

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JEDEC-95 Code:

JESD-30 Code:

JESD-609 Code:

Number of Elements:

Number of Terminals:

Operating Mode:

Package Body Material:

Package Shape:

Package Style:

Polarity/Channel Type:

Pulsed Drain Current-Max (IDM):

Surface Mount:

Terminal Finish:

Terminal Form:

Terminal Position:

Transistor Element Material:

Alternate Parts

SP001082134

INFIPP410N30NAKSA1

IPP410N30N

Cart

IPP410N30N

Product Technical Specifications

Source Content uid:

Manufacturer Part Number:

Rohs Code:

Part Life Cycle Code:

Ihs Manufacturer:

Package Description:

Reach Compliance Code:

ECCN Code:

Manufacturer:

Risk Rank:

Avalanche Energy Rating (Eas):

Case Connection:

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JEDEC-95 Code:

JESD-30 Code:

JESD-609 Code:

Number of Elements:

Number of Terminals:

Operating Mode:

Package Body Material:

Package Shape:

Package Style:

Polarity/Channel Type:

Pulsed Drain Current-Max (IDM):

Surface Mount:

Terminal Finish:

Terminal Form:

Terminal Position:

Transistor Element Material:

Alternate Parts

SP001082134

INFIPP410N30NAKSA1

IPP410N30N

Datasheets

Datasheets Files List

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