IRFP260NPBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRFP260NPBF

Manufacturer Part Number:

IRFP260NPBF

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

FLANGE MOUNT, R-PSFM-T3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

0.97

Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas):

560 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

200 V

Drain Current-Max (Abs) (ID):

50 A

Drain Current-Max (ID):

50 A

Drain-source On Resistance-Max:

0.04 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

FLANGE MOUNT

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

300 W

Pulsed Drain Current-Max (IDM):

200 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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IRFP260NPBF