K9F2G08U0MPCB0

Manufacturer: Samsung Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

K9F2G08U0M-PCB0T

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Part Package Code:

TSOP1

Package Description:

12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48

Pin Count:

48

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

Samsung Semiconductor

Risk Rank:

7.44

Access Time-Max:

30 ns

Additional Feature:

CONTAINS ADDITIONAL 64M BIT NAND FLASH

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e6

Length:

18.4 mm

Memory Density:

2147483648 bit

Memory IC Type:

FLASH

Memory Width:

8

Moisture Sensitivity Level:

3

Number of Functions:

1

Number of Sectors/Size:

2K

Number of Terminals:

48

Number of Words:

268435456 words

Number of Words Code:

256000000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

TSOP1

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, THIN PROFILE

Page Size:

2K words

Parallel/Serial:

PARALLEL

Peak Reflow Temperature (Cel):

260

Power Supplies:

3/3.3 V

Programming Voltage:

2.7 V

Qualification Status:

Not Qualified

Ready/Busy:

YES

Seated Height-Max:

1.2 mm

Sector Size:

128K

Standby Current-Max:

0.00005 A

Subcategory:

Flash Memories

Supply Current-Max:

0.03 mA

Supply Voltage-Max (Vsup):

3.6 V

Supply Voltage-Min (Vsup):

2.7 V

Supply Voltage-Nom (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

0.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

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Alternate Parts

K9F2G08U0MPCB0000

K9F2G08U0MPCB0

K9F2G08U0APCB0000